Wolfspeed launches the industry's first commercially available 10kV SiC power MOSFET, providing critical support for AI data center power grids

IT House, March 8 — Wolfspeed announced this week (March 5) the launch of the industry’s first commercially available 10kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), giving greater architectural flexibility to high-voltage power electronic system design and providing critical support for scenarios such as AI data center power grids.

According to the company, this product can achieve a lifespan of 158,000 years at a 20V gate bias voltage, maintaining reliable performance even when using body diodes, which is crucial for medium-voltage UPS systems, wind power generation, and solid-state transformers.

At the same time, this product features fewer system architecture units and a simpler structure. For example, a three-level inverter is simplified to a two-level topology, reducing costs by 30%, increasing switching frequency from 600Hz to 10,000Hz, and boosting power density by 300%. It also simplifies control and gate drive circuits and reduces the size of magnetic components, offering significant advantages over traditional silicon-based IGBT systems, with a conversion efficiency of up to 99%.

Notably, this scheme’s rise time is less than 10 nanoseconds, allowing it to replace traditional electrode-type spark gap switches and avoid the aging issues caused by temperature arcs over time.

Additionally, this solution can improve the timing accuracy of pulse power transmission and can be applied in geothermal power generation, AI data center power grids, semiconductor plasma etching, and sustainable fertilizer production.